BCR 151T E6327
TRANS PREBIAS PNP 50V 0.05A SC75Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR-151T-E6327 is a PNP pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 50mA, with a transition frequency of 120MHz. The integrated base resistors, R1 and R2, are both specified at 100 kOhms, contributing to its pre-biased configuration. Packaged in a PG-SC75-3D (SC-75, SOT-416) format, this device offers a power dissipation capability of 250mW. Typical applications include signal switching and amplification in consumer electronics and industrial control systems. The device exhibits a Vce(sat) of 300mV at 250µA base current and 5mA collector current, and a minimum DC current gain (hFE) of 70 at 5mA collector current and 5V Vce. It is supplied on tape and reel for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Supplier Device Package | PG-SC75-3D |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 120 MHz |
| Resistor - Base (R1) | 100 kOhms |
| Resistor - Emitter Base (R2) | 100 kOhms |
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