BCR 148F E6327
TRANS PREBIAS NPN 50V TSFP-3Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies NPN Pre-Biased Transistor, BCR-148F-E6327, features integrated base resistors (R1 = 47 kOhms, R2 = 47 kOhms) for simplified circuit design. This SOT-723 packaged device offers a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 100MHz and a power dissipation of 250mW, it is suitable for applications requiring stable switching and amplification. The device exhibits a minimum DC current gain (hFE) of 70 at 5mA collector current and 5V collector-emitter voltage. Typical saturation voltage is 300mV at 500µA base current and 10mA collector current. This component finds use in automotive, industrial, and consumer electronics applications. Supplied in Tape & Reel (TR).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Supplier Device Package | PG-TSFP-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 100 MHz |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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