BCR 146F E6327
TRANS PREBIAS NPN 50V TSFP-3Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies' BCR-146F-E6327 is an NPN pre-biased bipolar transistor. This device features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 70 mA. With a transition frequency of 150 MHz and a maximum power dissipation of 250 mW, it is suitable for applications requiring moderate switching speeds and power handling. The integrated base resistors, R1 at 47 kOhms and R2 at 22 kOhms, simplify circuit design. The DC current gain (hFE) is a minimum of 50 at 5 mA collector current and 5 V collector-emitter voltage. The transistor type is NPN - Pre-Biased, and it is supplied in the PG-TSFP-3 package, commonly known as SOT-723, for surface mounting. This component finds use in areas such as consumer electronics and industrial automation. The unit is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA, 5V |
| Supplier Device Package | PG-TSFP-3 |
| Current - Collector (Ic) (Max) | 70 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
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