BCR 142L3 E6327
TRANS PREBIAS NPN 50V TSLP-3Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR-142L3-E6327 is an NPN pre-biased bipolar transistor featuring internal base resistors (R1: 22 kO, R2: 47 kO) for simplified circuit design. This component offers a 50 V collector-emitter breakdown voltage and a maximum collector current of 100 mA. With a transition frequency of 150 MHz and a maximum power dissipation of 250 mW, it is suitable for applications requiring reduced component count and design complexity. The device operates with a typical Vce(sat) of 300 mV at 500 µA base current and 10 mA collector current. The minimum DC current gain (hFE) is 70 at 5 mA collector current and 5 V Vce. Packaged in a PG-TSLP-3-4 (SC-101, SOT-883) surface mount configuration and supplied on tape and reel, the BCR-142L3-E6327 finds application in various consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Supplier Device Package | PG-TSLP-3-4 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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