BCR 139F E6327
TRANS PREBIAS NPN 50V TSFP-3Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR-139F-E6327 is an NPN pre-biased bipolar transistor designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features a transition frequency of 150MHz and a maximum power dissipation of 250mW. The transistor type is NPN with integrated base biasing, including a base resistor (R1) of 22 kOhms. Minimum DC current gain (hFE) is specified as 120 at 5mA collector current and 5V Vce. Saturation voltage (Vce(sat)) is a maximum of 300mV at 500µA base current and 10mA collector current. Collector cutoff current (ICBO) is a maximum of 100nA. The component is supplied in a PG-TSFP-3 package, also known as SOT-723, and is available on tape and reel. This transistor finds application in various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 5mA, 5V |
| Supplier Device Package | PG-TSFP-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 22 kOhms |
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