BCR 135T E6327
TRANS PREBIAS NPN 50V 0.1A SC75Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR-135T-E6327 is an NPN Pre-Biased Bipolar Junction Transistor (BJT) designed for surface mount applications. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 150MHz, it is suitable for various signal processing tasks. The integrated base resistors, R1 at 10 kOhms and R2 at 47 kOhms, simplify circuit design by providing inherent biasing. The device offers a minimum DC current gain (hFE) of 70 at 5mA collector current and 5V Vce. The maximum power dissipation is 250mW. Packaged in an SC-75 (SOT-416) with a PG-SC75-3D supplier device package, it is supplied on a tape and reel. Applications include general-purpose switching and amplification in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Supplier Device Package | PG-SC75-3D |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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