BCR 133T E6327
TRANS PREBIAS NPN 50V 0.1A SC75Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR-133T-E6327 is an NPN pre-biased bipolar junction transistor designed for surface mounting. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a transition frequency of 130MHz and a maximum power dissipation of 250mW, it is suitable for general-purpose switching and amplification applications. The internal base resistor (R1) is 10 kOhms and the emitter-base resistor (R2) is 10 kOhms, providing a typical DC current gain (hFE) of 30 at 5mA collector current and 5V Vce. The Vce saturation voltage is specified at 300mV maximum with a base current of 500µA and a collector current of 10mA. The device is supplied in the PG-SC75-3D package, also known as SC-75 or SOT-416, and is available on tape and reel. This transistor is commonly employed in industrial automation, consumer electronics, and automotive control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | PG-SC75-3D |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 130 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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