BCR 133F E6327
TRANS PREBIAS NPN 50V TSFP-3Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies' BCR-133F-E6327 is an NPN pre-biased bipolar transistor in a PG-TSFP-3 (SOT-723) surface mount package. This device features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a transition frequency of 130MHz and a power dissipation of 250mW, it is suitable for applications requiring a low-power, general-purpose switching or amplifier function. The integrated base resistors, R1 and R2, are both specified at 10 kOhms, simplifying circuit design. Typical collector cutoff current is 100nA (ICBO), and the saturation voltage (Vce Sat) is a maximum of 300mV at 500µA base current and 10mA collector current. The minimum DC current gain (hFE) is 30 at 5mA collector current and 5V Vce. This component is commonly utilized in consumer electronics and industrial automation. The BCR-133F-E6327 is supplied on a tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | PG-TSFP-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 130 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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