BCR 133F B6327
TRANS PREBIAS NPN 50V TSFP-3Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR-133F-B6327 is an NPN pre-biased bipolar junction transistor (BJT) designed for surface-mount applications. This component features integrated base resistors (R1 = 10 kOhms, R2 = 10 kOhms), simplifying circuit design and reducing component count. The transistor offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. Its transition frequency reaches 130 MHz, making it suitable for moderate-speed switching and amplification tasks. With a maximum power dissipation of 250 mW, it is packaged in a compact PG-TSFP-3 (SOT-723) for efficient board space utilization. The BCR-133F-B6327 finds application in various industrial and consumer electronics, including signal conditioning and logic control circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | PG-TSFP-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 130 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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