BCR 129T E6327
TRANS PREBIAS NPN 50V 0.1A SC75Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR-129T-E6327 is an NPN pre-biased bipolar transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The transistor exhibits a transition frequency of 150 MHz and a power dissipation of up to 250 mW. It includes an integrated base resistor (R1) of 10 kOhms, simplifying circuit design. The DC current gain (hFE) is a minimum of 120 at 5 mA collector current and 5 V collector-emitter voltage. Saturation voltage (Vce Sat) is specified at a maximum of 300 mV for 500 µA base current and 10 mA collector current. The collector cutoff current (ICBO) is a maximum of 100 nA. Packaged in a PG-SC75-3D (SC-75, SOT-416) and supplied on tape and reel, this transistor is suitable for use in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 5mA, 5V |
| Supplier Device Package | PG-SC75-3D |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 10 kOhms |
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