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BCR 129F E6327

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BCR 129F E6327

TRANS PREBIAS NPN 50V TSFP-3

Manufacturer: Infineon Technologies

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Infineon Technologies BCR-129F-E6327 is an NPN pre-biased bipolar transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The transition frequency is specified at 150 MHz, with a minimum DC current gain (hFE) of 120 at 5mA collector current and 5V collector-emitter voltage. The device offers a maximum power dissipation of 250 mW. It includes an integrated base resistor (R1) of 10 kOhms. The saturation voltage (Vce(sat)) is a maximum of 300 mV at 500 µA base current and 10 mA collector current. The package is a PG-TSFP-3 (SOT-723) supplied on tape and reel. This transistor is suitable for use in industrial control, consumer electronics, and communication systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-723
Mounting TypeSurface Mount
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 5mA, 5V
Supplier Device PackagePG-TSFP-3
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max250 mW
Frequency - Transition150 MHz
Resistor - Base (R1)10 kOhms

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