BCR 119 E6433
TRANS PREBIAS NPN 50V SOT23Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR-119-E6433 is an NPN, pre-biased bipolar transistor. This device features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transition frequency is rated at 150MHz, with a maximum power dissipation of 200mW. The BCR-119-E6433 is housed in a PG-SOT23 surface-mount package and includes an integrated base resistor (R1) of 4.7 kOhms. It offers a minimum DC current gain (hFE) of 120 at 5mA collector current and 5V collector-emitter voltage. Typical applications include switching and amplification circuits in consumer electronics, industrial automation, and automotive systems. The component is supplied on tape and reel (TR).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 5mA, 5V |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
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