BCR 114L3 E6327
TRANS PREBIAS NPN 50V TSLP-3Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
Infineon Technologies BCR-114L3-E6327 is an NPN, pre-biased bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The integrated base resistors, R1 and R2, are specified at 4.7 kOhms and 10 kOhms respectively, providing a built-in bias. The transistor exhibits a minimum DC current gain (hFE) of 30 at 5mA collector current and 5V Vce. With a transition frequency of 160 MHz and a maximum power dissipation of 250mW, this device is suitable for signal amplification and switching in various electronic systems. The package type is PG-TSLP-3-4, supplied in a Tape & Reel (TR) configuration. This component finds application in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | PG-TSLP-3-4 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 160 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
Request a Quote
Clients Also Buy
BCR 191L3 E6327
TRANS PREBIAS PNP 50V TSLP-3
BCR573E6327HTSA1
TRANS PREBIAS PNP 50V SOT23
BCR198E6433HTMA1
TRANS PREBIAS PNP 50V SOT23
