BCR 114F E6327
TRANS PREBIAS NPN 50V TSFP-3Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
Infineon Technologies BCR-114F-E6327 is an NPN pre-biased bipolar transistor. This device features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transition frequency is specified at 160MHz, with a maximum power dissipation of 250mW. The internal base resistance (R1) is 4.7 kOhms and the emitter base resistance (R2) is 10 kOhms, contributing to a minimum DC current gain (hFE) of 30 at 5mA collector current and 5V collector-emitter voltage. It is supplied in a PG-TSFP-3 package suitable for surface mounting and comes on tape and reel. This component finds application in various industrial and consumer electronics, including signal conditioning and switching circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | PG-TSFP-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 160 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
Request a Quote
Clients Also Buy
BCR198E6433HTMA1
TRANS PREBIAS PNP 50V SOT23
BCR148WE6327BTSA1
TRANS PREBIAS NPN 50V SOT323
BCR 164T E6327
TRANS PREBIAS PNP 50V 0.1A SC75
