BCR 112T E6327
TRANS PREBIAS NPN 50V 0.1A SC75Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
Infineon Technologies BCR-112T-E6327 is an NPN pre-biased bipolar transistor. This device features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The frequency of transition for this SOT-416 packaged component is 140 MHz, with a maximum power dissipation of 250 mW. It includes an internal base resistor (R1) of 4.7 kOhms and an emitter base resistor (R2) of 4.7 kOhms, simplifying circuit design. The minimum DC current gain (hFE) is 20 at 5 mA and 5 V. This surface mount transistor is supplied in Tape & Reel packaging. Applications include consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5mA, 5V |
| Supplier Device Package | PG-SC75-3D |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 140 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
Request a Quote
Clients Also Buy
BCR 191L3 E6327
TRANS PREBIAS PNP 50V TSLP-3
BCR573E6327HTSA1
TRANS PREBIAS PNP 50V SOT23
BCR198E6433HTMA1
TRANS PREBIAS PNP 50V SOT23
