BCR 112L3 E6327
TRANS PREBIAS NPN 50V TSLP-3Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies NPN Pre-Biased Transistor, BCR-112L3-E6327, is designed for efficient signal switching and amplification. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a transition frequency of 140MHz and a power dissipation of 250mW, it is suitable for applications requiring moderate speed and power handling. The integrated bias resistors, R1 and R2, are both specified at 4.7 kOhms, simplifying circuit design. The transistor type is NPN with a pre-biased configuration. It is supplied in a PG-TSLP-3-4 package, suitable for surface mounting, and is available on tape and reel. This component finds application in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5mA, 5V |
| Supplier Device Package | PG-TSLP-3-4 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 140 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
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