BCR 108T E6327
TRANS PREBIAS NPN 50V 0.1A SC75Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR-108T-E6327 is an NPN pre-biased bipolar transistor designed for surface mounting within the SC-75 (SOT-416) package. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transistor exhibits a transition frequency of 170MHz and a maximum power dissipation of 250mW. It includes an integrated base resistor (R1) of 2.2 kOhms and an emitter base resistor (R2) of 47 kOhms. Key electrical characteristics include a minimum DC current gain (hFE) of 70 at 5mA collector current and 5V Vce, and a saturation voltage (Vce Sat) of 300mV at 500µA base current and 10mA collector current. The device is supplied on a Tape & Reel (TR) in PG-SC75-3D packaging. This transistor is commonly utilized in industrial automation and consumer electronics applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Supplier Device Package | PG-SC75-3D |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 170 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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