BCR 108F E6327
TRANS PREBIAS NPN 50V TSFP-3Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
Infineon Technologies NPN Pre-Biased Transistor, BCR-108F-E6327. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. The transition frequency is rated at 170MHz, with a minimum DC current gain (hFE) of 70 at 5mA, 5V. The integrated base resistors are R1 at 2.2 kOhms and R2 at 47 kOhms. Power dissipation is limited to 250mW. The transistor type is NPN - Pre-Biased, and it is housed in a PG-TSFP-3 (SOT-723) surface mount package. Applications include digital logic circuits, interface circuits, and signal amplification. The component is supplied on a Tape & Reel (TR).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Supplier Device Package | PG-TSFP-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 170 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
Request a Quote
Clients Also Buy
BCR198E6433HTMA1
TRANS PREBIAS PNP 50V SOT23
BCR148WE6327BTSA1
TRANS PREBIAS NPN 50V SOT323
BCR 164T E6327
TRANS PREBIAS PNP 50V 0.1A SC75
