BCR 103T E6327
TRANS PREBIAS NPN 50V 0.1A SC75Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR-103T-E6327 is an NPN, pre-biased bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transistor offers a transition frequency of 140MHz and a maximum power dissipation of 250mW. It is supplied in a PG-SC75-3D package, commonly known as SC-75 or SOT-416, on tape and reel. The internal bias resistors are specified as R1 = 2.2 kOhms and R2 = 2.2 kOhms, providing a minimum DC current gain (hFE) of 20 at 20mA collector current and 5V collector-emitter voltage. The saturation voltage (Vce Sat) is a maximum of 300mV at 1mA base current and 20mA collector current. The collector cutoff current (ICBO) is a maximum of 100nA. This device finds application in various consumer electronics and industrial control systems requiring simple, high-density switching and amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 20mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 20mA, 5V |
| Supplier Device Package | PG-SC75-3D |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 140 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
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