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BCR 101T E6327

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BCR 101T E6327

TRANS PREBIAS NPN 50V 0.05A SC75

Manufacturer: Infineon Technologies

Categories: Single, Pre-Biased Bipolar Transistors

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Infineon Technologies BCR-101T-E6327 is an NPN pre-biased bipolar junction transistor. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 50mA. The transistor exhibits a transition frequency of 100MHz, with a minimum DC current gain (hFE) of 70 at 5mA collector current and 5V collector-emitter voltage. The saturation voltage (Vce(sat)) is specified at a maximum of 300mV at 250µA base current and 5mA collector current. It includes integrated base resistors (R1) of 100 kOhms and emitter-base resistors (R2) of 100 kOhms. The device is housed in a PG-SC75-3D surface mount package, specifically the SC-75 (SOT-416) footprint, and is supplied on tape and reel. This component is suitable for applications in consumer electronics and industrial control systems. The maximum power dissipation is 250mW, and the collector cutoff current (ICBO) is a maximum of 100nA.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-75, SOT-416
Mounting TypeSurface Mount
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 5mA, 5V
Supplier Device PackagePG-SC75-3D
Current - Collector (Ic) (Max)50 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max250 mW
Frequency - Transition100 MHz
Resistor - Base (R1)100 kOhms
Resistor - Emitter Base (R2)100 kOhms

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