BCR 101L3 E6327
TRANS PREBIAS NPN 50V TSLP-3Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR-101L3-E6327 is an NPN pre-biased bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 50mA. It offers a transition frequency of 100MHz and a maximum power dissipation of 250mW. The internal base resistor (R1) is 100 kOhms, and the emitter-base resistor (R2) is also 100 kOhms, providing inherent biasing. The transistor exhibits a minimum DC current gain (hFE) of 70 at 5mA collector current and 5V Vce. Saturation voltage (Vce Sat) is specified at a maximum of 300mV under 250µA base current and 5mA collector current. Cutoff current (ICBO) is a maximum of 100nA. Supplied in a PG-TSLP-3-4 package and available on tape and reel, this transistor is suitable for applications in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Supplier Device Package | PG-TSLP-3-4 |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 100 MHz |
| Resistor - Base (R1) | 100 kOhms |
| Resistor - Emitter Base (R2) | 100 kOhms |
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