SKW25N120FKSA1
IGBT 1200V 46A 313W TO247-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SKW25N120FKSA1 is an NPT IGBT designed for high-voltage applications. This component features a 1200V collector-emitter breakdown voltage and a continuous collector current (Ic) of 46A, with a pulsed capability of 84A. The device dissipates a maximum power of 313W and offers a low on-state voltage (Vce(on)) of 3.6V at 15V gate voltage and 25A collector current. Key performance parameters include a gate charge of 225 nC and a reverse recovery time (trr) of 90 ns under specified test conditions (800V, 25A, 22 Ohm, 15V). The SKW25N120FKSA1 is housed in a PG-TO247-3-1 package, suitable for through-hole mounting, and operates across a temperature range of -55°C to 150°C. This IGBT is commonly utilized in power factor correction, motor drives, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 90 ns |
| Vce(on) (Max) @ Vge, Ic | 3.6V @ 15V, 25A |
| Supplier Device Package | PG-TO247-3-1 |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 45ns/730ns |
| Switching Energy | 3.7mJ |
| Test Condition | 800V, 25A, 22Ohm, 15V |
| Gate Charge | 225 nC |
| Current - Collector (Ic) (Max) | 46 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 84 A |
| Power - Max | 313 W |
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