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SKP02N120XKSA1

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SKP02N120XKSA1

IGBT 1200V 6.2A 62W TO220-3

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies SKP02N120XKSA1 is an NPT IGBT designed for high-voltage applications. This component features a collector-emitter breakdown voltage of 1200 V and a continuous collector current of 6.2 A, with a pulsed current capability of 9.6 A. The IGBT type is NPT, and it has a standard input type. Key parameters include a gate charge of 11 nC and a switching energy of 220 µJ, tested under conditions of 800 V, 2 A, 91 Ohms, and 15 V. The on-state voltage (Vce(on)) is a maximum of 3.6 V at 15 V gate-source voltage and 2 A collector current. It offers a maximum power dissipation of 62 W and has a reverse recovery time (trr) of 50 ns. The operating temperature range is -55°C to 150°C (TJ). This device is supplied in a PG-TO220-3-1 package suitable for through-hole mounting and is packaged in a tube. Applications include power factor correction, motor drives, and industrial power supplies.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)50 ns
Vce(on) (Max) @ Vge, Ic3.6V @ 15V, 2A
Supplier Device PackagePG-TO220-3-1
IGBT TypeNPT
Td (on/off) @ 25°C23ns/260ns
Switching Energy220µJ
Test Condition800V, 2A, 91Ohm, 15V
Gate Charge11 nC
Current - Collector (Ic) (Max)6.2 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)9.6 A
Power - Max62 W

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