SKB15N60 E8151
IGBT 600V 31A 139W TO263-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SKB15N60-E8151 is an NPT (Non-Punch-Through) Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 31A, with a pulsed capability of 62A. The low on-state voltage of 2.4V at 15V gate-emitter voltage and 15A collector current, coupled with a maximum power dissipation of 139W, ensures efficient operation. The device exhibits a gate charge of 76 nC and switching times of 32ns turn-on and 234ns turn-off at 25°C (400V, 15A, 21 Ohm, 15V test conditions). The SKB15N60-E8151 is housed in a PG-TO263-3-2 surface mount package, commonly known as TO-263AB, suitable for automated assembly processes. This IGBT finds application in power factor correction, motor control, and general-purpose inverters across industrial and automotive sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 279 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 15A |
| Supplier Device Package | PG-TO263-3-2 |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 32ns/234ns |
| Switching Energy | 570µJ |
| Test Condition | 400V, 15A, 21Ohm, 15V |
| Gate Charge | 76 nC |
| Current - Collector (Ic) (Max) | 31 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 62 A |
| Power - Max | 139 W |
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