SKB02N60E3266ATMA1
IGBT 600V 6A 30W TO263-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SKB02N60E3266ATMA1 is an NPT IGBT component designed for surface mount applications within the PG-TO263-3-2 package. This device offers a collector-emitter breakdown voltage of 600 V and a continuous collector current capability of 6 A, with pulsed current handling up to 12 A. Key performance parameters include a maximum power dissipation of 30 W, a gate charge of 14 nC, and a switching energy of 64 µJ under specified test conditions (400 V, 2 A, 118 O, 15 V). The on-state voltage drop (Vce(on)) is a maximum of 2.4 V at 15 V gate-source voltage and 2 A collector current. The component is supplied in Tape & Reel packaging and operates across a temperature range of -55°C to 150°C. This IGBT is suitable for power switching applications in industries such as industrial motor drives and power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 130 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 2A |
| Supplier Device Package | PG-TO263-3-2 |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 20ns/259ns |
| Switching Energy | 64µJ |
| Test Condition | 400V, 2A, 118Ohm, 15V |
| Gate Charge | 14 nC |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 12 A |
| Power - Max | 30 W |
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