SIGC81T60SNCX1SA1
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC81T60SNCX1SA1 is an NPT IGBT die designed for high-power applications. This component features a 600V collector-emitter breakdown voltage and supports a continuous collector current of 100A, with a pulsed current capability of 300A. The Vce(on) is rated at a maximum of 2.5V at 15V gate-emitter voltage and 100A collector current. Switching characteristics include a typical turn-on delay of 65ns and turn-off delay of 450ns at 25°C, under test conditions of 400V, 100A, and 3.3 Ohm with a 15V gate drive. The operating temperature range is from -55°C to 150°C. This surface mountable die is provided in bulk packaging. It is suitable for use in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 100A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 65ns/450ns |
| Switching Energy | - |
| Test Condition | 400V, 100A, 3.3Ohm, 15V |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 300 A |
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