SIGC81T60NCX7SA2
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies NPT IGBT wafer, part number SIGC81T60NCX7SA2, offers robust performance for demanding applications. This die-level component features a 600 V collector-emitter breakdown voltage and a continuous collector current rating of 100 A, with a pulsed capability of 300 A. The NPT IGBT technology ensures efficient switching characteristics, with typical on-state voltage of 2.5 V at 15 V gate drive and 100 A collector current. Switching times at 25°C are specified at 95 ns turn-on and 200 ns turn-off under test conditions of 300 V, 100 A, 2.2 Ohm, and 15 V gate drive. Designed for surface mount integration, this component operates reliably across an extended temperature range of -55°C to 150°C (TJ). The SIGC81T60NCX7SA2 is suitable for use in high-power switching applications within industries such as industrial automation, power supplies, and electric vehicle powertrains.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 100A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 95ns/200ns |
| Switching Energy | - |
| Test Condition | 300V, 100A, 2.2Ohm, 15V |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 300 A |
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