SIGC81T60NCX1SA5
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC81T60NCX1SA5 is an NPT IGBT die designed for high-performance power switching applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current of 100A, with a pulsed current capability of 300A. The Vce(on) is specified at a maximum of 2.5V at 15V gate-emitter voltage and 100A collector current. Switching characteristics include a typical turn-on delay of 95ns and turn-off delay of 200ns at 25°C, under test conditions of 300V, 100A, 2.2 Ohm, and 15V gate drive. Operating across a temperature range of -55°C to 150°C (TJ), this device is suitable for demanding environments. The SIGC81T60NCX1SA5 is supplied as a bare die in bulk packaging for integration into custom power modules. This IGBT is widely utilized in industrial automation, electric vehicle powertrains, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 100A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 95ns/200ns |
| Switching Energy | - |
| Test Condition | 300V, 100A, 2.2Ohm, 15V |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 300 A |
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