SIGC81T60NCX1SA3
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC81T60NCX1SA3 is a 600V NPT IGBT die designed for high-power applications. This component offers a continuous collector current (Ic) of 100A and a pulsed collector current (Icm) of 300A, with a specified Vce(on) of 2.5V at 15V gate-emitter voltage and 100A collector current. The part features standard input and a surface mount die package for efficient thermal management. Typical switching times are measured at 95ns turn-on and 200ns turn-off, with test conditions of 300V, 100A, 2.2Ohm, and 15V. Operating temperature ranges from -55°C to 150°C (TJ). This IGBT die is suitable for demanding applications in power factor correction, motor control, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 100A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 95ns/200ns |
| Switching Energy | - |
| Test Condition | 300V, 100A, 2.2Ohm, 15V |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 300 A |
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