SIGC61T60NCX7SA1
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC61T60NCX7SA1 is an NPT IGBT die designed for high-performance power switching applications. This component offers a 600V collector-emitter breakdown voltage and a continuous collector current capability of 75A, with a pulsed current rating of 225A. The on-state voltage (Vce(on)) is a maximum of 2.5V at 15V gate-emitter voltage and 75A collector current, achieved under specific test conditions of 300V, 75A, and 3 Ohm. Typical turn-on delay is 65ns and turn-off delay is 170ns at 25°C. Operating across a wide temperature range from -55°C to 150°C (TJ), this die is suitable for surface mount configurations and is supplied in bulk packaging. The SIGC61T60NCX7SA1 is utilized in demanding industries such as industrial automation, power supplies, and electric vehicle powertrains where robust and efficient power conversion is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 75A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 65ns/170ns |
| Switching Energy | - |
| Test Condition | 300V, 75A, 3Ohm, 15V |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 225 A |
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