SIGC61T60NCX1SA3
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC61T60NCX1SA3 is an NPT IGBT Die designed for demanding applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 75A, with a pulsed capability of up to 225A. The on-state voltage (Vce(on)) is specified at a maximum of 2.5V at 15V gate-emitter voltage and 75A collector current. Switching characteristics demonstrate a typical turn-on delay (Td(on)) of 65ns and a turn-off delay (Td(off)) of 170ns, tested under a 300V, 75A, 3 Ohm, 15V condition. Operating temperature ranges from -55°C to 150°C (TJ). This device is supplied as a Die in Bulk packaging, suitable for surface mount integration. Applications include industrial motor drives and power factor correction circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 75A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 65ns/170ns |
| Switching Energy | - |
| Test Condition | 300V, 75A, 3Ohm, 15V |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 225 A |
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