SIGC61T60NCX1SA1
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC61T60NCX1SA1 is an NPT IGBT die designed for high-performance power switching applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 75A, with a pulsed capability of 225A. The Vce(on) is specified at a maximum of 2.5V at 15V gate-emitter voltage and 75A collector current, under test conditions of 300V, 75A, 3 Ohm, and 15V. Typical switching times are 65ns turn-on and 170ns turn-off at 25°C. Operating temperature ranges from -55°C to 150°C (TJ). This die is supplied in bulk packaging and is suitable for surface mount configurations. The SIGC61T60NCX1SA1 finds application in industrial motor drives, power factor correction, and uninterruptible power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 75A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 65ns/170ns |
| Switching Energy | - |
| Test Condition | 300V, 75A, 3Ohm, 15V |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 225 A |
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