SIGC42T60UNX7SA2
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies' SIGC42T60UNX7SA2 is an NPT IGBT die designed for high-performance power switching applications. Featuring a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 50 A, this component is suitable for demanding environments. The typical on-state voltage (Vce(on)) is 3.15 V at 15 V gate-emitter voltage and 50 A collector current. Switching characteristics include a turn-on delay (Td(on)) of 48 ns and a turn-off delay (Td(off)) of 350 ns at 25°C, under test conditions of 400 V, 50 A, 6.8 Ohm, and 15 V. This device operates within a temperature range of -55°C to 150°C (TJ). Its high pulsed current capability, rated at 150 A (Icm), makes it a robust choice for applications in industrial motor control, power supplies, and renewable energy systems. The component is supplied as a bare die in bulk packaging for advanced integration.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.15V @ 15V, 50A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 48ns/350ns |
| Switching Energy | - |
| Test Condition | 400V, 50A, 6.8Ohm, 15V |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 150 A |
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