SIGC42T60UNX7SA1
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC42T60UNX7SA1 is an NPT IGBT designed for demanding power applications. This surface mount die offers a 600V collector-emitter breakdown voltage and a continuous collector current rating of 50A, with a pulsed capability of 150A. Optimized for efficiency, it features a Vce(on) of 3.15V at 15V gate-emitter voltage and 50A collector current. Switching characteristics include typical turn-on delay of 48ns and turn-off delay of 350ns at 25°C. Operating across a wide temperature range of -55°C to 150°C (TJ), this component is well-suited for use in industrial motor drives, power supplies, and renewable energy systems where robust performance and thermal management are critical. The device is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.15V @ 15V, 50A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 48ns/350ns |
| Switching Energy | - |
| Test Condition | 400V, 50A, 6.8Ohm, 15V |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 150 A |
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