SIGC42T60UNX1SA1
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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The Infineon Technologies SIGC42T60UNX1SA1 is a high-performance NPT IGBT die designed for demanding power switching applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 50A, with a pulsed capability of 150A. The Vce(on) is specified at a maximum of 3.15V at 15V gate drive and 50A collector current. With standard input and a surface mount die package, it offers efficient thermal management. Typical switching times are 48ns turn-on and 350ns turn-off, tested under 400V, 50A, 6.8 Ohm, and 15V conditions. The operating temperature range spans from -55°C to 150°C (TJ). This IGBT die is suitable for use in industrial automation, power supplies, and motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.15V @ 15V, 50A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 48ns/350ns |
| Switching Energy | - |
| Test Condition | 400V, 50A, 6.8Ohm, 15V |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 150 A |
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