SIGC42T60SNCX7SA1
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC42T60SNCX7SA1 is a high-performance NPT IGBT die designed for demanding power switching applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current capability of 50A, with a pulsed current rating of 150A. The device exhibits a low Vce(on) of 2.5V at 15V gate drive and 50A collector current, and a typical turn-on delay of 57ns and turn-off delay of 380ns under test conditions of 400V, 50A, and 6.8 Ohm with a 15V gate voltage. Operating across a temperature range of -55°C to 150°C (TJ), this surface mount die is suitable for applications in industrial motor control, power supplies, and automotive power electronics. Packaged in bulk, the SIGC42T60SNCX7SA1 offers a robust solution for power management needs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 50A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 57ns/380ns |
| Switching Energy | - |
| Test Condition | 400V, 50A, 6.8Ohm, 15V |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 150 A |
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