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SIGC42T60SNCX1SA2

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SIGC42T60SNCX1SA2

IGBT 3 CHIP 600V WAFER

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies SIGC42T60SNCX1SA2 is a 600V NPT IGBT die designed for high-power switching applications. This component features a collector current capability of 50A continuous and a pulsed collector current of 150A. The on-state voltage (Vce(on)) is specified at a maximum of 2.5V at 15V gate-emitter voltage and 50A collector current. Typical switching characteristics include a turn-on delay (Td(on)) of 57ns and a turn-off delay (Td(off)) of 380ns, tested under a 400V, 50A, 6.8 Ohm load with 15V gate drive. The operating temperature range is -55°C to 150°C (TJ). This surface mount die is suitable for demanding applications in industrial power supplies, motor control, and renewable energy systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseDie
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 50A
Supplier Device PackageDie
IGBT TypeNPT
Td (on/off) @ 25°C57ns/380ns
Switching Energy-
Test Condition400V, 50A, 6.8Ohm, 15V
Current - Collector (Ic) (Max)50 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)150 A

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