SIGC42T60SNCX1SA1
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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The Infineon Technologies SIGC42T60SNCX1SA1 is a 600V NPT IGBT die designed for high-performance power switching applications. This component features a collector-emitter voltage (Vce) of 600V and a continuous collector current (Ic) of 50A at a Vge of 15V. Its on-state voltage (Vce(on)) is specified at a maximum of 2.5V under test conditions of 400V and 50A. The device exhibits switching characteristics with a turn-on delay (Td(on)) of 57ns and a turn-off delay (Td(off)) of 380ns, measured at 25°C. Operating across a wide temperature range from -55°C to 150°C (TJ), this bare die is suitable for demanding environments. The SIGC42T60SNCX1SA1 is commonly utilized in industrial motor drives, power supplies, and automotive power systems. It is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 50A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 57ns/380ns |
| Switching Energy | - |
| Test Condition | 400V, 50A, 6.8Ohm, 15V |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 150 A |
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