SIGC42T60NCX1SA6
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC42T60NCX1SA6 is an NPT IGBT die designed for high-performance power switching applications. This component offers a 600V collector-emitter breakdown voltage and a continuous collector current capability of 50A, with a pulsed current rating of 150A. Featuring a Vce(on) of 2.5V at 15V gate drive and 50A collector current, it demonstrates efficient conduction characteristics. The device exhibits typical switching times of 43ns turn-on and 130ns turn-off at 25°C under test conditions of 300V, 50A, and 3.3 Ohm with a 15V gate voltage. Operating across a wide temperature range from -55°C to 150°C, this die is delivered in bulk packaging. It is suitable for demanding applications in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 50A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 43ns/130ns |
| Switching Energy | - |
| Test Condition | 300V, 50A, 3.3Ohm, 15V |
| Grade | - |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Qualification | - |
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