SIGC42T60NCX1SA3
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies' SIGC42T60NCX1SA3 is an NPT IGBT die designed for high-performance power applications. This component offers a robust 600V collector-emitter breakdown voltage with a continuous collector current capability of 50A (150A pulsed). The Vce(on) is rated at 2.5V at 15V gate-emitter voltage and 50A, with typical switching times of 43ns turn-on and 130ns turn-off at 300V and 50A. Operating across a wide temperature range of -55°C to 150°C, this die is suitable for demanding environments. The SIGC42T60NCX1SA3 is frequently utilized in industrial motor drives, power supplies, and uninterruptible power systems. It is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 50A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 43ns/130ns |
| Switching Energy | - |
| Test Condition | 300V, 50A, 3.3Ohm, 15V |
| Grade | - |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Qualification | - |
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