SIGC28T60SEX1SA2
IGBT 3 CHIP 600VManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC28T60SEX1SA2 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-performance power switching applications. This discrete IGBT component features a 600V collector-emitter breakdown voltage and a continuous collector current capability of 50A, with a pulsed capability of 150A. The device exhibits a low on-state voltage of 2.05V at 15V gate-emitter voltage and 50A collector current, contributing to reduced conduction losses. Engineered with a Trench Field Stop architecture, it offers optimized switching characteristics and reduced switching energy. The SIGC28T60SEX1SA2 is supplied as a die for surface mount applications, operating across a wide temperature range of -40°C to 175°C. This component is suitable for demanding applications in industrial power supplies, motor control, and automotive electronics.
Additional Information
Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.05V @ 15V, 50A |
| Supplier Device Package | Die |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 150 A |
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