SIGC25T60UNX7SA2
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC25T60UNX7SA2 is an NPT IGBT die designed for demanding applications. This component offers a 600V collector-emitter breakdown voltage and a continuous collector current of 30A, with a pulsed capability of up to 90A. The Vce(on) is specified at a maximum of 3.15V at 15V gate-emitter voltage and 30A collector current, under test conditions of 400V and 1.8 Ohm. Switching characteristics include a turn-on delay of 16ns and turn-off delay of 122ns at 25°C. Operating across an industrial temperature range of -55°C to 150°C, this die is suitable for surface mount configurations and is supplied in bulk packaging. This device finds application in power factor correction, motor control, and uninterruptible power supply (UPS) systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.15V @ 15V, 30A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 16ns/122ns |
| Switching Energy | - |
| Test Condition | 400V, 30A, 1.8Ohm, 15V |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 90 A |
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