SIGC25T60UNX1SA3
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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The Infineon Technologies SIGC25T60UNX1SA3 is a high-performance NPT IGBT die designed for demanding power applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 30A, with a pulsed current capability of 90A. The on-state voltage (Vce(on)) is a maximum of 3.15V at 15V gate drive and 30A collector current, achieved under specific test conditions of 400V, 30A, 1.8 Ohm, and 15V. Switching characteristics include turn-on delay (Td(on)) of 16ns and turn-off delay (Td(off)) of 122ns at 25°C. Operating across a temperature range of -55°C to 150°C (TJ), this die is supplied in bulk packaging and is intended for surface mount integration. The SIGC25T60UNX1SA3 is utilized in various industrial sectors including motor control, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.15V @ 15V, 30A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 16ns/122ns |
| Switching Energy | - |
| Test Condition | 400V, 30A, 1.8Ohm, 15V |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 90 A |
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