SIGC25T60UNX1SA2
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC25T60UNX1SA2 is an NPT IGBT die designed for high-performance power switching applications. This component offers a 600V collector-emitter breakdown voltage with a continuous collector current capability of 30A, and a pulsed current capability of 90A. The Vce(on) is specified at 3.15V maximum at 15V gate-emitter voltage and 30A collector current. With typical turn-on delay (Td(on)) of 16ns and turn-off delay (Td(off)) of 122ns at 25°C, this die is suitable for demanding switching frequencies. The operating temperature range is from -55°C to 150°C (TJ). This device is supplied in bulk packaging as a die for surface mount integration. It finds application in industrial automation, power supplies, and motor drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.15V @ 15V, 30A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 16ns/122ns |
| Switching Energy | - |
| Test Condition | 400V, 30A, 1.8Ohm, 15V |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 90 A |
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