SIGC25T60UNX1SA1
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC25T60UNX1SA1 is an NPT IGBT die designed for high-performance applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 30A, with a pulsed current capability of 90A. The on-state voltage (Vce(on)) is a maximum of 3.15V at 15V gate voltage and 30A collector current. Switching characteristics include turn-on delay (td(on)) of 16ns and turn-off delay (td(off)) of 122ns at 25°C, tested under 400V, 30A, 1.8 Ohm, and 15V conditions. Operating temperature ranges from -55°C to 150°C (TJ). The SIGC25T60UNX1SA1 is provided as a bare die for surface mount integration, suitable for power factor correction, uninterruptible power supplies (UPS), and industrial motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.15V @ 15V, 30A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 16ns/122ns |
| Switching Energy | - |
| Test Condition | 400V, 30A, 1.8Ohm, 15V |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 90 A |
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