SIGC25T60SNCX7SA1
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC25T60SNCX7SA1 is a 600V NPT IGBT die designed for high-efficiency power switching applications. This component offers a continuous collector current of 30A and a pulsed collector current of 90A, with a low on-state voltage (Vce(on)) of 2.5V at 15V gate-emitter voltage and 30A collector current. The typical turn-on delay is 44ns and turn-off delay is 324ns, tested under a 400V, 30A, 11 Ohm load with a 15V gate drive. Operating across a wide temperature range of -55°C to 150°C (TJ), this surface mount die is suitable for demanding industrial sectors including automotive, industrial motor control, and power supplies. The bulk packaging ensures efficient handling for high-volume manufacturing.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 30A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 44ns/324ns |
| Switching Energy | - |
| Test Condition | 400V, 30A, 11Ohm, 15V |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 90 A |
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