SIGC25T60SNCX1SA2
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC25T60SNCX1SA2 is an NPT IGBT die designed for high-performance power switching applications. This component offers a 600V collector-emitter breakdown voltage and a continuous collector current capability of 30A, with a pulsed capability of 90A. Featuring a standard input type, the SIGC25T60SNCX1SA2 exhibits a low on-state voltage of 2.5V at 15V gate-emitter voltage and 30A collector current. Typical switching times are 44ns turn-on and 324ns turn-off, tested under specific conditions (400V, 30A, 11 Ohm, 15V). The operating temperature range is -55°C to 150°C (TJ). This die package is suitable for surface mount assembly within bulk packaging. Applications for this component include industrial motor drives, power supplies, and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 30A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 44ns/324ns |
| Switching Energy | - |
| Test Condition | 400V, 30A, 11Ohm, 15V |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 90 A |
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