SIGC25T60NCX7SA2
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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The Infineon Technologies SIGC25T60NCX7SA2 is a high-performance NPT IGBT die designed for demanding power electronics applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 30A, with a pulsed capability of 90A. The Vce(on) is specified at a maximum of 2.5V at 15V gate-emitter voltage and 30A collector current, under test conditions of 300V, 30A, 8.2 Ohm, and 15V. Switching characteristics include a turn-on delay of 21ns and a turn-off delay of 110ns at 25°C. Operating reliably across a wide temperature range of -55°C to 150°C, this die is supplied in bulk packaging. Its robust design makes it suitable for incorporation into power supplies, motor drives, and industrial automation systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 30A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 21ns/110ns |
| Switching Energy | - |
| Test Condition | 300V, 30A, 8.2Ohm, 15V |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 90 A |
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