SIGC25T60NCX1SA7
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC25T60NCX1SA7 is an NPT IGBT die designed for high-performance power applications. This component offers a 600V collector-emitter breakdown voltage and a continuous collector current capability of 30A, with a pulsed current rating of 90A. Optimized for efficiency, it features a Vce(on) of 2.5V at 15V gate-emitter voltage and 30A collector current. Switching characteristics at 300V, 30A, and 8.2 Ohm indicate a turn-on delay of 21ns and a turn-off delay of 110ns. Operating across a wide temperature range of -55°C to 150°C (TJ), this die is supplied in bulk packaging. Its robust construction and electrical parameters make it suitable for demanding applications in industrial motor control, power supplies, and automotive electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 30A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 21ns/110ns |
| Switching Energy | - |
| Test Condition | 300V, 30A, 8.2Ohm, 15V |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 90 A |
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