SIGC25T60NCX1SA6
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC25T60NCX1SA6 is an NPT IGBT die designed for high-performance applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current of 30A, with a pulsed capability of 90A. The Vce(on) is specified at 2.5V maximum at 15V gate-emitter voltage and 30A collector current, with typical switching times of 21ns turn-on and 110ns turn-off under test conditions of 300V, 30A, 8.2 Ohm, and 15V.
The SIGC25T60NCX1SA6 operates across a wide temperature range from -55°C to 150°C (TJ). It is supplied as a bare die in bulk packaging, suitable for advanced surface mount integration. This IGBT is commonly utilized in power factor correction circuits, industrial motor control, and uninterruptible power supplies (UPS).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 30A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 21ns/110ns |
| Switching Energy | - |
| Test Condition | 300V, 30A, 8.2Ohm, 15V |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 90 A |
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